|
|
MMBT2222AのメーカーはCystech Electonicsです、この部品の機能は「General Purpose NPN Epitaxial Planar Transistor」です。 |
部品番号 | MMBT2222A |
| |
部品説明 | General Purpose NPN Epitaxial Planar Transistor | ||
メーカ | Cystech Electonics | ||
ロゴ | |||
このページの下部にプレビューとMMBT2222Aダウンロード(pdfファイル)リンクがあります。 Total 8 pages
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
MMBT2222A
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2010.11.12
Page No. : 1/8
Description
• The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching
application.
• High IC(Max), IC(Max) = 0.6A.
• Low VCE(sat) , Typ. VCE(sat) = 0.2V at IC/IB = 500mA/50mA.
Optimal for low Voltage operation.
• Complementary to MMBT2907A.
• Pb-free package
Symbol
MMBT2222A
Outline
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature
Note : Free air condition
MMBT2222A
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
75
50
6
0.6
225 (Note)
560
556 (Note)
223
-55~+150
-55~+150
Unit
V
V
V
A
mW
mW
°C/W
°C/W
°C
°C
CYStek Product Specification
1 Page CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2010.11.12
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.25
0.2 1mA
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
IB=100uA
1 2 34 5
Collector-to-Emitter Voltage---VCE(V)
6
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
12345
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
Ta=125°C
Current Gain vs Collector Current
1000
Ta=125°C
100
Ta=25°C
Ta=75°C
10
1
1000
VCE=1V
10 100
Collector Current---IC(mA)
Current Gain vs Collector Current
Ta=125°C
100 Ta=25°C Ta=75°C
1000
VCE=2V
10
1
10 100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
VCESAT=10IB
1000
100
Ta=25°C
Ta=75°C
VCE=10V
10
1
10 100
Collector Current---IC(mA)
100
10
1000 1
125°C
75°C
25°C
10 100
Collector Current---IC(mA)
1000
MMBT2222A
CYStek Product Specification
3Pages Reel Dimension
CYStech Electronics Corp.
Spec. No. : C203N3
Issued Date : 2002.05.11
Revised Date : 2010.11.12
Page No. : 6/8
Carrier Tape Dimension
MMBT2222A
CYStek Product Specification
6 Page | |||
ページ | 合計 : 8 ページ | ||
|
PDF ダウンロード | [ MMBT2222A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MMBT2222 | GENERAL PURPOSE NPN TRANSISTORS | TIPTEK |
MMBT2222 | Diode ( Rectifier ) | American Microsemiconductor |
MMBT2222 | NPN (GENERAL PURPOSE TRANSISTOR) | Samsung |
MMBT2222 | Surface mount Si-Epitaxial PlanarTransistors | Diotec |