|
|
Datasheet MBNP01Q40Q8 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MBNP01Q40Q8 | Complex Transistors CYStech Electronics Corp.
Complex Transistors
MBNP01Q40Q8
Spec. No. : C068Q8 Issued Date : 2016.05.27 Revised Date : 2016.05.30 Page No. : 1/11
Features
• Two PNP and two NMOS chips are assembled in a standard SOP-8 package • Mounting area could be greatly reduced. • Pb-free lead plating and | CYStech Electronics | transistor |
MBN Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MBN1200D25B | Silicon N-Channel IGBT IGBT MODULE
MBN1200D25B
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to Hitachi igbt | | |
2 | MBN1200D33A | Silicon N-Channel IGBT IGBT MODULE
MBN1200D33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to Hitachi igbt | | |
3 | MBN1200GS12AW | Silicon N-Channel IGBT IGBT MODU ODULE
MBN1200GS12AW
Silicon N-channel IGBT OUTLINE DRAWING
130 110 4- φ 6.5
Unit in mm
2-M4
19.5 27.5
FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to bas Hitachi igbt | | |
4 | MBN400A6 | IGBT Module Range Hitachi igbt | | |
5 | MBN400C20 | IGBT Module / Silicon N Channel IGBT IGBT MODULE
MBN400C20
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to lo Hitachi igbt | | |
6 | MBN400C33A | IGBT Module / Silicon N Channel IGBT IGBT MODULE
MBN400C33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to l Hitachi igbt | | |
7 | MBN400GR12 | IGBT Module Hitachi IGBT Module / Silicon N-Channel IGBT
Spec. No. IGBT-SP-99026(R1)
MBN400GR12
[Rated 400A/1200V, Single-pack type]
FEATURES
· Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) Hitachi igbt | |
Esta página es del resultado de búsqueda del MBNP01Q40Q8. Si pulsa el resultado de búsqueda de MBNP01Q40Q8 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |