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KF19N20IのメーカーはKECです、この部品の機能は「N CHANNEL MOS FIELD EFFECT TRANSISTOR」です。 |
部品番号 | KF19N20I |
| |
部品説明 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
メーカ | KEC | ||
ロゴ | |||
このページの下部にプレビューとKF19N20Iダウンロード(pdfファイル)リンクがあります。 Total 6 pages
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 200V, ID= 15A
Drain-Source ON Resistance : RDS(ON)=0.155
Qg(typ.) =21nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
200
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
15
9.4
45*
215
4.9
4.5
83.3
0.67
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Thermal Characteristics
Tstg -55 150
Thermal Resistance, Junction-to-Case RthJC
1.5
Thermal Resistance, Junction-to-
Ambient
RthJA
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF19N20D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF19N20D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF19N20I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
PIN CONNECTION
IPAK(1)
2014. 12. 01
Revision No : 2
1/6
1 Page KF19N20D/I
102
101
100
10-1
VGS = 7,10V
VGS = 5V
102
101
100
10-1
2014. 12. 01
Revision No : 2
102
VDS = 20V
101
100
0 2 4 6 8 10
1.2
1.0
0.8
0.6
VGS = 7V
0.4
0.2
0.0
5 10 15 20 25 30
VGS = 10V
IDS = 7.5A
3/6
3Pages KF19N20D/I
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
DUT
L
0.5 VDSS
10V
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2014. 12. 01
Revision No : 2
6/6
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ KF19N20I データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
KF19N20D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF19N20F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF19N20I | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |