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GC5016 の電気的特性と機能

GC5016のメーカーはTexasです、この部品の機能は「Wideband Quad Digital Down-Converter/Up-Converter (Rev. J)」です。


製品の詳細 ( Datasheet PDF )

部品番号 GC5016
部品説明 Wideband Quad Digital Down-Converter/Up-Converter (Rev. J)
メーカ Texas
ロゴ Texas ロゴ 




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GC5016 Datasheet, GC5016 PDF,ピン配置, 機能
www.ti.com
GC5016
SLWS142G − JANUARY 2003 − REVISED NOVEMBER 2005
WIDEBAND QUAD DIGITAL DOWNĆCONVERTER/UPĆCONVERTER
FEATURES
D Four Independently Configurable Wideband
Down-Converter or Up-Converter Channels
− Four Channel Down Convert Mode
− Four Channel Up Convert Mode
− Two Channels Down and Two Channels
Up Mode
D Down-Conversion Channel Mode
− Input Rates to 160-MSPS for Four
Channels, 320-MSPS for Two Channels in
Double Rate Mode
− Four Wideband Down-Conversion
Channels Support UMTS Standards
− 115-dB SFDR
− FIR Filter Block Consists of 16 Cells
Providing Up to 256 Taps Per Channel
− 64 Parallel Input Bits and 64 Parallel
Output Bits Provide Flexible I/O Options
− Many Multiplex Output Options
D Up-Conversion Channel Mode
− Output Rates to 160-MSPS for Four
Channels, 320-MSPS for Two Channels
− Four Up-Conversion Channels Support
UMTS Standards
− FIR Filter Block Consists of 16 Cells
Providing up to 256 Taps Per Channel
− 64 Parallel Input Bits and 64 Parallel
Output Bits Provide Flexible I/O Options
− Multiple Real and Complex Outputs
− Two Channel Double Rate Real Output
Mode With Rates to 320 MSPS
− Outputs Can Be Independent, Summed
Into Two or One Output(s), and Optionally
Merged With Multiple GC5016 Chips
D JTAG Boundary Scan
D 3.3-V I/O, 1.8-V Core
D Power Dissipation: <1 W for Four Channels
D Package: 252-Ball, 17-mm PBGA, 1-mm Pitch
APPLICATIONS
D Cellular Base Transceiver Station Transmit
and Receive Channels
− WCDMA
− CDMA2000
D Radar
D General Filtering
D Test and Measurement
Table of Contents
1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 12 Terminal Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 13 GC5016 Down-Conversion Mode . . . . . . . . . . . . . . . . . . . . . . . 11
3 Other Reference Material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 14 GC5016 Up-Conversion Mode . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 15 GC5016 in Transceiver Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
5 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . 3 16 General GC5016 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 17 Configuration Software . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
7 AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 18 Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
8 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 19 Board Bring-Up Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
9 Power Consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
10 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Pin Assignments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Products
conform to specifications per the terms of Texas Instruments standard warranty.
Production processing does not necessarily include testing of all parameters.
Copyright 2003 − 2005, Texas Instruments Incorporated

1 Page





GC5016 pdf, ピン配列
www.ti.com
GC5016
SLWS142G − JANUARY 2003 − REVISED NOVEMBER 2005
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
4 ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
Pad ring supply voltage, VPAD
Core supply voltage, VCORE
Input voltage (undershoot and overshoot), VIN
Storage temperature, Tstg
Junction temperature, TJ
Lead soldering temperature (10 seconds)
ESD classification
Moisture sensitivity
Human body model
Machine body model
Charged device model
GC5016
−0.3 V to 4 V
−0.3 V to 2.3 V
−0.5 V to VPAD+0.5 V
−65°C to 150°C
105°C
300°C
2 kV
200 V
500 V
Level 3
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
5 RECOMMENDED OPERATING CONDITIONS
MIN MAX UNITS
Pad ring supply voltage, VPAD
3 3.6 V
Core supply voltage, VCORE
1.6 2 V
Temperature ambient, no air flow, TA(1)
−40 85 _C
Junction temperature, TJ(2)
105 _C
(1) Chips specifications in the AC CHARACTERISTICS and DC CHARACTERISTICS tables are production tested at 100_C case temperature. QA
tests are performed at 85°C case temperature.
(2) Thermal management may be required for full rate operation (see the THERMAL CHARACTERISTICS table). The circuit is designed for junction
temperatures up to 125°C. Sustained operation at elevated temperatures reduces long-term reliability. Lifetime calculations based on maximum
junction temperature of 105°C.
6 DC CHARACTERISTICS
−40°C to 85°C case temperature unless otherwise noted
PARAMETER
VPAD = 3 V to 3.6 V
MIN TYP MAX
VIL Voltage input low (1)
VIH Voltage input high (1)
2
VOL
Voltage output low (IOL = 2 mA) (1)
VOH Voltage output high (IOH = −2 mA) (1)
2.4
| IIN | Leakage current (VIN = 0 V or VPAD), inputs or outputs in high-impedance state condition (1)
| IPU | Pullup current (VIN = 0 V) ( TDI, TMS, TCK) (1)
5
ICCQ Quiescent supply current, ICORE or IPAD(VIN=0 or VPAD, RST = TRST = 0) (1)
CIN Data input capacitance (all inputs except CK) (2)
4
CCK
Clock input capacitance (CK input) (2)
13
(1) Each part is tested with a 100°C case temperature for the given specification.
(2) Controlled by design and process and not directly tested.
NOTE: General: Voltages are measured at low speed. Output voltages are measured with the indicated current load.
General: Currents are measured at nominal voltages, high temperature (100_C for production test, 85_C for QA).
0.8
0.5
1
35
4
UNIT
V
V
V
V
µA
µA
mA
pF
pF
3


3Pages


GC5016 電子部品, 半導体
GC5016
SLWS142G − JANUARY 2003 − REVISED NOVEMBER 2005
10 Functional Block Diagram
NCO
AI [15:0]
I
RINF
Q
RSEL
Dual CIC
PFIR
Pwr Mtr
AGC
NCO Cross connect for double rate
BI [15:0]
I
RINF
Q
RSEL
Dual CIC
PFIR
Pwr Mtr
AGC
CI [15:0]
I
RINF
Q
DI [15:0]
I
RINF
Q
NCO
RSEL
Dual CIC
PFIR
Pwr Mtr
AGC
NCO Cross connect for double rate
RSEL
Dual CIC
PFIR
Pwr Mtr
AGC
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ROUTF
AO [15:0]
AFS
ACK
TDM
Broadcast
ROUTF
BO [15:0]
BFS
BCK
ROUTF
CO [15:0]
CFS
CCK
ROUTF
DO [15:0]
DFS
DCK
TDI
TMS
TCK
TRST
JTAG
TDO
A [4:0]
CE
WR
RD
WRMODE
Control
C [15:0]
SIA
SIB
CK
RST
Figure 1. GC5016 in Digital Down-Conversion Mode
CK
and
Syncs
SO
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
GC501

Transistor

Tesla Elektronicke
Tesla Elektronicke
GC5016

Wideband Quad Digital Down-Converter/Up-Converter (Rev. J)

Texas
Texas
GC5018

8-Channel Wideband Receiver. (Rev. B)

Texas Instruments
Texas Instruments


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