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TMP10N60AG の電気的特性と機能

TMP10N60AGのメーカーはTRinnoです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TMP10N60AG
部品説明 N-channel MOSFET
メーカ TRinno
ロゴ TRinno ロゴ 




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TMP10N60AG Datasheet, TMP10N60AG PDF,ピン配置, 機能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60A(G)/TMPF10N60A(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
10A <0.7W
D
G
S
Device
TMP10N60A / TMPF10N60A
TMP10N60AG / TMPF10N60AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60A / TMPF10N60A
TMP10N60AG / TMPF10N60AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60A(G) TMPF10N60AG)
600
±30
10 10 *
6.48 6.48 *
40 40 *
660
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60A(G)
0.63
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF10N60A(G)
2.4
62.5
Unit
/W
/W
1/7

1 Page





TMP10N60AG pdf, ピン配列
TMP10N60A(G)/TMPF10N60A(G)
30
Top V =15.0V
GS
25 10.0V
9.0V
8.0V
7.0V
20 6.0V
Bottom 5.5V
15
10
5
1. T = 25
C
2. 250μs Pulse Test
0
0 5 10 15 20
Drain-Source Voltage, V [V]
DS
V = 30V
DS
250 μs Pulse Test
10 150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
10
1.4
T = 25
J
1.2
1.0
0.8
0.6
0.4
0.2
0
5
V = 10V
GS
V = 20V
GS
10 15 20 25 30
Drain Current,I [A]
D
40
V = 0V
GS
250μs Pulse Test
30
20
150
25
10
0
0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V]
SD
2.0
3000
2000
1000
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
iss
V =0V
GS
f = 1 MHz
C
oss
C
rss
12
I = 10A
D
10
8
6
4
2
V = 300V
DS
V = 120V
DS
V = 480V
DS
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
October 2012 : Rev0
0
0
www.trinnotech.com
10 20 30
Total Gate Charge, Q [nC]
G
40
3/7


3Pages


TMP10N60AG 電子部品, 半導体
TMP10N60A(G)/TMPF10N60A(G)
TO-220AB-3L MECHANICAL DATA
October 2012 : Rev0
www.trinnotech.com
6/7

6 Page



ページ 合計 : 7 ページ
 
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[ TMP10N60AG データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TMP10N60A

N-channel MOSFET

TRinno
TRinno
TMP10N60AG

N-channel MOSFET

TRinno
TRinno


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