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TMP12N60 の電気的特性と機能

TMP12N60のメーカーはTRinnoです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TMP12N60
部品説明 N-channel MOSFET
メーカ TRinno
ロゴ TRinno ロゴ 




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TMP12N60 Datasheet, TMP12N60 PDF,ピン配置, 機能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP12N60/TMPF12N60
TMP12N60G/TMPF12N60G
VDSS = 660 V @Tjmax
ID = 12A
RDS(on) = 0.65 W(max) @ VGS= 10 V
D
G
S
Device
TMP12N60 / TMPF12N60
TMP12N60G / TMPF12N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP12N60 / TMPF12N60
TMP12N60G / TMPF12N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP12N60(G) TMPF12N60(G)
600
±30
12 12*
7.5 7.5*
48 48*
860
12
23.1
231 53
1.85 0.42
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP12N60(G)
0.54
62.5
May 2010 : Rev0
www.trinnotech.com
TMPF12N60(G)
2.34
62.5
Unit
/W
/W
1/5

1 Page





TMP12N60 pdf, ピン配列
TMP12N60/TMPF12N60
TMP12N60G/TMPF12N60G
40
Top V =15.0V
35
GS
10.0V
8.0V
30
7.0V
6.5V
6.0V
25 Bottom 5.0V
20
15
10
5
1. T = 25
C
2. 250μ s Pulse Test
0
0 10 20 30 40 50
Drain-Source Voltage, V [V]
DS
V = 30V
DS
250 μ s Pulse Test
10
150
25
1
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
10
2.0
T = 25
J
1.5
1.0
0.5
V = 10V
GS
V = 20V
GS
0.0
0
5 10 15 20 25 30 35 40
Drain Current,I [A]
D
3500
3000
2500
2000
1500
1000
500
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
V =0V
GS
f = 1 MHz
C
oss
C
iss
C
rss
100 101
Drain-Source Voltage, V [V]
DS
40
V = 0V
GS
35 250μ s Pulse Test
30
25
20
15
10
5
150
25
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, V [V]
SD
12
I = 12A
D
10
8
V = 120V
DS
V = 300V
DS
6
V = 480V
DS
4
2
0
0 5 10 15 20 25 30 35 40 45
Total Gate Charge, Q [nC]
G
May 2010 : Rev0
www.trinnotech.com
3/5


3Pages





ページ 合計 : 5 ページ
 
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ダウンロード
[ TMP12N60 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TMP12N60

N-channel MOSFET

TRinno
TRinno
TMP12N60A

N-channel MOSFET

TRinno
TRinno
TMP12N60AG

N-channel MOSFET

TRinno
TRinno
TMP12N60G

N-channel MOSFET

TRinno
TRinno


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