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TMP2N60AZ の電気的特性と機能

TMP2N60AZのメーカーはTRinnoです、この部品の機能は「N-channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TMP2N60AZ
部品説明 N-channel MOSFET
メーカ TRinno
ロゴ TRinno ロゴ 




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TMP2N60AZ Datasheet, TMP2N60AZ PDF,ピン配置, 機能
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
TMP2N60AZ(G)/TMPF2N60AZ(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
2.0A
< 4.0W
Device
TMP2N60AZ / TMPF2N60AZ
TMP2N60AZG / TMPF2N60AZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP2N60AZ / TMPF2N60AZ
TMP2N60AZG / TMPF2N60AZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP2N60AZ(G) TMPF2N60AZ(G)
600
±30
2.0 2.0 *
1.43 1.43 *
8 8*
66
2.0
5.21
52.1 17.3
0.416
0.138
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP2N60AZ(G)
2.4
62.5
October 2012 : Rev0
www.trinnotech.com
TMPF2N60AZ(G)
7.2
62.5
Unit
/W
/W
1/7

1 Page





TMP2N60AZ pdf, ピン配列
TMP2N60AZ(G)/TMPF2N60AZ(G)
6
Top V =15.0V
GS
10.0V
9.0V
8.0V
7.0V
4 6.0V
Bottom 5.5V
2
1. T = 25
C
2. 250μs Pulse Test
0
0 5 10 15 20
Drain-Source Voltage, V [V]
DS
6
T = 25
J
5
4
3
2
01
V = 10V
GS
234
Drain Current,I [A]
D
V = 20V
GS
56
10
V = 30V
DS
250 μs Pulse Test
150
1
25
-55
0.1
2468
Gate-Source Voltage, V [V]
GS
8
V = 0V
GS
250μs Pulse Test
6
4 150
25
2
0
0.0 0.5 1.0 1.5
Source-Drain Voltage, V [V]
SD
10
2.0
600
500
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
12
I = 2.0A
D
10
V = 300V
DS
C
V =0V
GS
400
iss f = 1 MHz
8
V = 120V
DS
300 C
oss
200
C
rss
100
6
4
2
V = 480V
DS
0
10-1 100 101
Drain-Source Voltage, V [V]
DS
October 2012 : Rev0
0
02
www.trinnotech.com
468
Total Gate Charge, Q [nC]
G
10 12
3/7


3Pages


TMP2N60AZ 電子部品, 半導体
TMP2N60AZ(G)/TMPF2N60AZ(G)
TO-220AB-3L MECHANICAL DATA
October 2012 : Rev0
www.trinnotech.com
6/7

6 Page



ページ 合計 : 7 ページ
 
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ダウンロード
[ TMP2N60AZ データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TMP2N60AZ

N-channel MOSFET

TRinno
TRinno
TMP2N60AZG

N-channel MOSFET

TRinno
TRinno


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