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PDF 2SA1162 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1162 | |
| Descripción | PNP EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | WEJ | |
| Logotipo |  |
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RoHS
2SA1162
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQRENCY,LOW NOISE AMPLIFIER
DComplemen to 2SC2712
Collector-current:Ic=-100mA
.,LTCollector-Emiller Voltage:VCE=-45V
SOT-23
1
1.
2.4
1.3
3
2
1.BASE
2.EMITTER
3.COLLECTOR
OUnit:mm
CABSOLUTE MAXIMUM RATINGS
ICCharacteristic
Collector-Base Voltage
Collector-Emitter Voltage
NEmitter-Base Voltage
Collector Current
OCollector Dissipation Ta=25oC*
Junction Temperature
RStorage Temperature
Symbol
VCBO
VCEO
VEBO
Ic
PD
Tj
Tstg
Rating
-50
-45
-5
-100
225
150
-55~150
(Ta=25 oC)
Unit
V
V
V
mA
mW
O
C
O
C
Electrical Characteristics
(Ta=25 oC)
TParameter
Symbol MIN. TYP. MAX. Unit
Condition
CCollector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage#
EEmitter-Base Breakdown Voltage
Collector-Base Cutoff Current
LEmitter-Base Cutoff Current
DC Current Gain
ECollector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
JOutput Capacitance
Current Gain-Bandwidth Product
WENoise Figure
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCE(sat)
VBE(sat)
VBE(on)
Cob
fT
NF
-50 V IC=-100 A IE=0
-45 V IC=-1mA IB=0
-5 V IE=-100 A IC=0
-50 nA VCB=-50V, VC=0
-50 nA VCB=-5V, IC=0
60 200 600
VCE=-5V, IC=1mA
-0.20 -0.7 V IC=-100mA, IB=-5mA
-0.82 100 V
-0.6 -0.67 -0.75 V
IC=-100mA, IB=-5mA
VCe=-5V, IC=-2mA
4.5 7 PF VCB=-10V, IE=0 f=1MHz
100 190
MHz VCE=-5V IC=-10mA
0.7 10 dB VCE=-5V IC=-0.2mA
f=1MHz Rs=1Kohm
*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC
# Pulse Test: Pulse Width 300uS Duty cycle 2%
DEVICE MARKING:
2SA1162=M6
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SA1162.PDF ] | |
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