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MMBT2222A の電気的特性と機能

MMBT2222AのメーカーはSeCoSです、この部品の機能は「General Purpose Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 MMBT2222A
部品説明 General Purpose Transistor
メーカ SeCoS
ロゴ SeCoS ロゴ 




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MMBT2222A Datasheet, MMBT2222A PDF,ピン配置, 機能
Elektronische Bauelemente
MMBT2222A
NPN Silicon
General Purpose Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
Epitaxial Planar Die Construction
Complementary PNP Type Available
(MMBT2907A)
Ideal for Medium Power Amplification and
Switching
COLLECTOR
3
1
BASE
2
EMITTER
A
L
3
Top View
12
BS
3
1
2
VG
C
D
HK
J
MAXIMUM RATINGS
Rating
Symbol
2222
2222A Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
30 40
60 75
5.0 6.0
600
Vdc
Vdc
Vdc
mAdc
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max Unit
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
417
– 55 to +150
°C/W
°C
MMBT2222 = M1B; MMBT2222A = 1P
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
MMBT2222
MMBT2222A
V(BR)CEO
Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
MMBT2222
MMBT2222A
V(BR)CBO
Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
MMBT2222
MMBT2222A
V(BR)EBO
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
Min Max Unit
30 — Vdc
40 —
60 — Vdc
75 —
5.0 — Vdc
6.0 —
Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current (VCB = 50 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0, TA = 125°C)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1. FR±5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
MMBT2222A
ICEX
10 nAdc
MMBT2222
ICBO — 0.01 µAdc
MMBT2222A
— 0.01
MMBT2222
— 10
MMBT2222A
— 10
MMBT2222A
IEBO
100 nAdc
MMBT2222A
IBL
— 20 nAdc
REM : Thermal Clad is a trademark of the Bergquist Company.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 5

1 Page





MMBT2222A pdf, ピン配列
Elektronische Bauelemente
MMBT2222A
NPN Silicon
General Purpose Transistor
+16 V
0
–2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 µs,
Duty Cycle 2.0%
< 2 ns
1 k
+ 30 V
200
CS* < 10 pF
+16 V
0
–14 V
1.0 to 100 µs,
Duty Cycle 2.0%
< 20 ns
1k
1N914
+ 30 V
200
CS* < 10 pF
Scope rise time < 4 ns
–4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. Turn–On Time
Figure 2. Turn–Off Time
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
IC, Collector Current (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30 50
I B, Base Current (mA)
Figure 4. Collector Saturation Region
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 5


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