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MMBT2222AのメーカーはTaiwan Semiconductorです、この部品の機能は「NPN Small Signal Transistor」です。 |
部品番号 | MMBT2222A |
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部品説明 | NPN Small Signal Transistor | ||
メーカ | Taiwan Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとMMBT2222Aダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Small Signal Product
MMBT2222A
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
- Epitaxial planar die construction
- Surface device type mounting
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-23
MECHANICAL DATA
- Case: SOT- 23, molded plastic
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260oC/10s
- Weight: 8mg (approximately)
- Marking Code: 1P
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 300
Collector-Base Voltage
VCBO
75
Collector-Emitter Voltage
VCEO
40
Emitter-Base Voltage
VEBO
6
Collector Current
IC 600
Junction and Storage Temperature Range
TJ , TSTG
-55 to +150
Notes:1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Collector-Base Breakdown Voltage
IC = 10 μA IE = 0
Collector-Emitter Breakdown Voltage
IC = 10 mA IB = 0
Emitter-Base Breakdown Voltage
IE = 10 μA IC = 0
Collector Cut-off Current
VCB = 60 V IE = 0
Collector Cut-off Current
VCE = 60 V
VBE(OFF) = 3 V
Emitter Cut-off Current
VEB = 3 V
IC = 0
VCE = 10 V IC = 500 mA
VCE = 10 V IC = 150 mA
DC Current Gain
VCE = 10 V IC = 10 mA
VCE = 10 V IC = 1 mA
VCE = 10 V IC = 0.1 mA
Collector-Emitter Saturation Voltage
IC = 500 mA IB = 50 mA
Base-Emitter Saturation Voltage
IC = 500 mA IB = 50 mA
Transition frequency
VCE = 20 V
IC = 10 mA f= 100MHz
Output Capacitance
VCB= 10V
IE = 0
f= 1.0MHz
Input Capacitance
VEB= 0.5V
IC = 0
f= 1.0MHz
Delay Time
VCC=30V
VBE(off)= -0.5V IC=150mA
Rise Time
IB1=15mA
Storage Time
VCC=30V
IC=150mA IB1= -IB2=15mA
Fall Time
VCC=30V
IC=150mA IB1= -IB2=15mA
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
td
tr
ts
tf
MIN
MAX
75 -
40 -
6-
- 0.01
- 0.01
- 0.1
40 -
100 300
75 -
50 -
35 -
-1
-2
300 -
8
25
- 10
- 25
- 225
- 60
UNIT
mW
V
V
V
mA
oC
UNIT
V
V
V
μA
μA
μA
V
V
MHz
pF
pF
ns
ns
ns
ns
Document Number: DS_S1502003
Version: D15
1 Page Small Signal Product
ORDER INFORMATION (EXAMPLE)
MMBT2222A RFG
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
SOT-23
SUGGEST PAD LAYOUT
MMBT2222A
Taiwan Semiconductor
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min Max
2.70 3.10
1.10 1.50
0.30 0.51
1.78 2.04
2.10 2.64
0.89 1.30
0.55 REF
0.10 REF
Unit (inch)
Min Max
0.106 0.122
0.043 0.059
0.012 0.020
0.070 0.080
0.083 0.104
0.035 0.051
0.022 REF
0.004 REF
Unit (mm)
DIM
TYP
Z 2.8
X 0.7
Y 0.9
C 1.9
E 1.0
Unit (inch)
TYP
0.11
0.03
0.04
0.07
0.04
Document Number: DS_S1502003
Version: D15
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ MMBT2222A データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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