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電子部品 BCV61A Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 BCV61A
部品説明 NPN Silicon Double Transistor
メーカ Infineon Technologies AG
ロゴ Infineon Technologies AG ロゴ 
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BCV61A Datasheet, BCV61A PDF,ピン配置, 機能
NPN Silicon Double Transistor
 To be used as a current mirror
 Good thermal coupling and VBE matching
 High current gain
 Low collector-emitter saturation voltage
C1 (2)
Tr.1
4
C2 (1)
Tr.2
BCV61
3
2
1 VPS05178
Type
BCV61A
BCV61B
BCV61C
Marking
1Js
1Ks
1Ls
E1 (3)
E2 (4)
EHA00012
Pin Configuration
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
1 = C2 2 = C1 3 = E1 4 = E2
Package
SOT143
SOT143
SOT143
Maximum Ratings
Parameter
Collector-emitter voltage
(transistor T1)
Collector-base voltage (open emitter)
(transistor T1)
Emitter-base voltage
DC collector current
Peak collector current
Base peak current (transistor T1)
Total power dissipation, TS = 99 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCBO
VEBS
IC
ICM
IBM
Ptot
Tj
Tstg
Value
30
30
6
100
200
200
300
150
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
170
Unit
V
mA
mW
°C
K/W
1 Jul-10-2001

--------------------------------------------
BCV61A pdf, 電子部品, 半導体, ピン配列
BCV61
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
Characteristics
Base-emitter forward voltage
IE = 10 µA
IE = 250 mA
Matching of transistor T1 and transistor T2
at IE2 = 0.5mA and VCE1 = 5V
TA = 25 °C
TA = 150 °C
VBES
0.4 -
V
-
- - 1.8
IC1 / IC2
-
- --
0.7 - 1.3
0.7 - 1.3
Thermal coupling of transistor T1 and
transistor T2 1) T1: VCE = 5V
Maximum current of thermal stability of IC1
IE2
- 5 - mA
AC characteristics for transistor T1
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k ,
f = 1 kHz,  f = 200 Hz
Short-circuit input impedance
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Short-circuit forward current transf.ratio
IC = 1 mA, VCE = 10 V, f = 1 kHz
Open-circuit output admittance
IC = 1 mA, VCE = 10 V, f = 1 kHz
fT - 250 - MHz
Ccb - 3 - pF
Ceb - 8 -
F - 2 - dB
h11e
- 4.5 - k
h12e
- 2 - 10-4
h21e
100 - 900 -
h22e
- 30 - S
1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm
3
Jul-10-2001





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