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電子部品 BCV61A Datasheet 詳細情報 ( 特性, スペック, ピン接続図 )

部品番号 BCV61A
部品説明 NPN general purpose double transistor
メーカ NXP
ロゴ NXP ロゴ 
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BCV61A Datasheet, BCV61A PDF,ピン配置, 機能
BCV61
NPN general-purpose double transistors
Rev. 04 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose double transistors in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
BCV61
BCV61A
BCV61B
BCV61C
Package
NXP
SOT143B
JEITA
-
PNP complement
BCV62
BCV62A
BCV62B
BCV62C
1.2 Features
„ Low current (max. 100 mA)
„ Low voltage (max. 30 V)
„ Matched pairs
1.3 Applications
„ Applications with working point independent of temperature
„ Current mirrors
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Description
collector TR2;
base TR1 and TR2
collector TR1
emitter TR1
emitter TR2
Simplified outline Graphic symbol
43
43
12
TR2 TR1
12
006aaa842

--------------------------------------------
BCV61A pdf, 電子部品, 半導体, ピン配列
NXP Semiconductors
BCV61
NPN general-purpose double transistors
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
[1] Device mounted on an FR4 PCB.
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Transistor TR1
ICBO collector-base cut-off current
IEBO emitter-base cut-off current
hFE DC current gain
VCEsat collector-emitter saturation
voltage
VBEsat base-emitter saturation voltage
VBE base-emitter voltage
fT transition frequency
Cc collector capacitance
NF noise figure
Conditions
VCB = 30 V;
IE = 0 A
VCB = 30 V;
IE = 0 A;
Tj = 150 °C
VEB = 5 V;
IC = 0 A
VCE = 5 V;
IC = 100 μA
VCE = 5 V;
IC = 2 mA
IC = 10 mA;
IB = 0.5 mA
IC = 100 mA;
IB = 5 mA
IC = 10 mA;
IB = 0.5 mA
IC = 100 mA;
IB = 5 mA
IC = 2 mA;
VCE = 5 V
IC = 10 mA;
VCE = 5 V
VCE = 5 V;
IC = 10 mA;
f = 100 MHz
VCB = 10 V;
IE = ie = 0 A;
f = 1 MHz
VCE = 5 V;
IC = 200 μA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
BCV61_4
Product data sheet
Rev. 04 — 18 December 2009
Min Typ Max Unit
[1] - - 500 K/W
Min Typ Max Unit
- - 15 nA
- - 5 μA
- - 100 nA
100 -
-
110 -
800
- 90 250 mV
- 200 600 mV
[1] -
700 -
mV
[1] -
900 -
mV
[2] 580 660 700 mV
[2] - - 770 mV
100 - - MHz
- 2.5 - pF
- - 10 dB
© NXP B.V. 2009. All rights reserved.
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