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部品番号 G1000QC450
部品説明 Anode Shorted Gate Turn-Off Thyristor
メーカ IXYS
ロゴ IXYS ロゴ 
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G1000QC450 Datasheet, G1000QC450 PDF,ピン配置, 機能
WESTCODE
An IXYS Company
Date:- 31 Jan, 2008
Data Sheet Issue:- 1
Provisional Data
Anode Shorted Gate Turn-Off Thyristor
Types G1000QC400 to G1000QC450
Absolute Maximum Ratings
VDRM
VRSM
VDC-link
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Maximum continuos DC-link voltage
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
4500
4500
2800
18
18
UNITS
V
V
V
V
V
ITGQ
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tj op
Tstg
RATINGS
Peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQ, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms, (Note 4)
Peak non-repetitive surge current tp=2ms, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=2800V, VDM4500V diGQ/dt=25A/µs, ITGQ=1000A and CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Tj(initial)=125°C, single phase, 180° sinewave, re-applied voltage VD=VR10V.
5) For di/dt>300A/µs please consult the factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1000
300
443
867
6500
11450
211.25×103
300
185
7
100A
18
80
20
-40 to +125
-40 to +125
UNITS
A
nH
A
A
A
kA
A2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 1 of 15
January, 2008

--------------------------------------------
G1000QC450 pdf, 電子部品, 半導体, ピン配列
WESTCODE An IXYS Company
Anode Shorted Gate Turn-Off Thyristor types G1000QC400 to G1000QC450
Notes on ratings and characteristics.
1. Maximum Ratings.
1.1 Off-state voltage ratings.
Unless otherwise indicated, all off-state voltage ratings are given for gate conditions as diagram 1. For
other gate conditions see the curves of figure 5. It should be noted that VDRM is the repeatable peak
voltage which may be applied to the device and does not relate to a DC operating condition.
Diagram 1.
1.2 Reverse voltage rating.
All devices in this series have a minimum VRRM of 18 Volts.
1.3 Peak turn-off current.
The figure given in maximum ratings is the highest value for normal operation of the device under
conditions given in note 2 of ratings. For other combinations of ITGQ, VD and Cs see the curves in figures
14 & 15. The curves are effective over the normal operating range of the device and assume a snubber
circuit equivalent to that given in diagram 2. If a more complex snubber, such as an Underland circuit, is
employed then the equivalent CS should be used and Ls<0.3µH must be ensured for the curves to be
applied.
Ls
Ds R
Cs
Diagram 2.
1.4 R.M.S and average current.
Measured as for standard thyristor conditions, double side cooled, single phase, 50Hz, 180° half-
sinewave. These are included as a guide to compare the alternative types of GTO thyristors available,
values can not be applied to practical applications, as they do not include switching losses.
1.5 Surge rating and I2t.
Ratings are for half-sinewave, peak value against duration is given in the curve of figure 2.
1.6 Snubber loop inductance.
Use of GTO thyristors with snubber loop inductance, Ls<0.3µH implies no dangerous Vs voltages (see
diagrams 2 & 3) can be applied, provided the other conditions given in note 1.3 are enforced. Alternatively
Vs should be limited to 800 Volts to avoid possible device failure.
Provisional Data Sheet. Types G1000QC400 to G1000QC450 Issue 1
Page 3 of 15
January, 2008





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